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BAS70 Features Low Turn-on Voltage LowForward Voltage-0.75V(Max) @ IF= 10 mA Very Low Capacitance - Less Than 2.0pF @ 0V Forhighspeedswitchingapplication, circuit protection Surface Mount Schottky Barrier Diode A L BS Mechanical Data 1 V 3 To p View G 2 Case: Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any 1 C D H K J 3 3 CATH O DE 1 AN O DE SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm 2 Maximum Rating S (TJ = 1505C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation O @ TA = 25 C O Derate above 25 C Operating Junction and Storage Temperature Range DE VI CE M AR KI NG BAS70 = BE ELECTRICAL CHARACTERISTICS (TA = 25 OC unless otherwise noted) Characteristic Symbol V(BR)R CT IR VF VF VF Min 70 2.0 0.1 10 410 750 1.0 Max Unit Volts pF mAdc mVdc mVdc Vdc Symbol VR PF TJ, Tstg Value 70 225 1.8 -55to +1 50 Unit Volts mW O mW/ C O C Reverse Breakdown Voltage (IR = 10 mA) Total Capacitance (VR = 0 V, f = 1.0 MHz) Reverse Leakage (VR = 50 V) (VR = 70 V) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 15 mAdc) RATINGS AND CHARACTERISTIC CURVES BAS70 Figure 1. Typical Forward Voltage 100 10 100 Figure 2. Reverse Current versus ReverseVoltage T A = 150 OC O 125 C IF, Forward Current (mA) 10 IR, Reverse Current (mA) 1.0 0.1 0.0 1 0.0 01 85 OC 1.0 85 OC 25 OC 0 0.1 150 OC 1 25 OC -40 -55 0.2 0.3 0.4 O O C 0.1 C 25 OC 0 5.0 10 15 20 25 30 35 40 45 50 0.5 0.6 0.7 0.8 0.9 1.0 V,F Fo rward Voltage (V) VR, Reverse Voltage (V) Figure 3. Typical Capacitance 1.4 1.2 1.0 CT, Capacitance (pF) 0.8 0.6 0.4 0.2 0 0 5.0 10 15 20 25 30 35 40 45 50 VR, Reverse Voltage (V) |
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